Miniature pressure sensor and pressure sensor arrays

ABSTRACT

An improved pressure sensor element and pressure sensor array is formed by a cathode layer, a cathode tip attached to the cathode layer, and an anode layer opposing the cathode layer. The magnitude of the electron current flowing between the cathode tip and the anode layer is dependant on the field strength at the cathode tip, which is dependant on the separation between the cathode tip and the anode layer. As a deflectable anode layer is deflected towards the cathode tip, the field strength increases, causing a corresponding change in the magnitude of the flow of electrons. The cathode tip is separated from the anode layer such that electron current is produced at relatively low voltages by tunneling or field emission. The exact method of current production is selected by controlling the initial separation between the anode layer and the cathode tip. Pressure sensor elements are produced using a series of fabrication processes including forming a hole in an insulating layer deposited on the cathode layer, depositing a cathode having a cathode tip into the hole thus formed, and bonding the anode layer onto the insulating layer, thereby forming a pressure sensor element. A plurality of pressure sensor elements are fabricated into pressure sensor arrays by this method. Pressure sensor elements or pressure sensor arrays are thus produced at low cost.

FIELD OF THE INVENTION

The present invention relates generally to pressure sensors and morespecifically to arrays of, and methods for manufacturing, pressuresensors for measuring pressure profiles and determining spatial pressuredistributions for medical applications.

BACKGROUND OF THE INVENTION

There are many applications where accurate measurement of pressurerequires the use of miniaturized pressure sensors, including monitoringof physiological parameters, process monitoring of industrial facilitiesand automobile performance monitoring. In medical applications,miniaturized sensors are used for both invasive and non-invasivemeasurement of blood pressure as well as measurement of other bodypressures for diagnostic purposes. In many instances, improvedmonitoring of the parameters of interest requires the use of closelyspaced sensing devices. Blood pressure measurement by tonometry, forexample, requires pressure sensors narrower than the underlying arteryand is facilitated by sensor element spacing smaller than the arterywidth.

Many of the pressure sensors employed for medical monitoring are basedon strain gage or capacitance measurement techniques. U.S. Pat. No.4,881,410, for example, discloses a silicon pressure sensor based oncapacitance measurement which requires fabricating a sophisticatedstructure of metal and silicon on the surface of a chip. The pressuresensitivity of the device is controlled by scaling the dimensions of thesensor. U.S. Pat. No. 4,771,638 discloses a pressure sensor operating onthe strain gage principle. Sensors such as those described above aregenerally built in layers parallel to the underlying substrate of themicro chip. The large surface areas needed by these conventional sensorsto produce signals large enough for accurate measurement limits thedensity of pressure sensing devices on the chip surface.

Although field emitter arrays have been used in semiconductor devices,e.g., U.S. Pat. Nos. 4,721,885 and 4,835,438, and have also been used aselectron sources in semiconductor and cathode ray tube (CRT) displays,e.g., U.S. Pat. No. 4,766,340, heretofore pressure sensors have not beenproduced using such a technique or incorporating such a device.

SUMMARY OF THE INVENTION

Accordingly, one object of the present invention is to provide animproved pressure sensor.

Another object of the present invention is to provide an improvedpressure sensor array wherein the density of pressure sensors per unitarea can be increased.

A further object of the present invention is to provide an improvedpressure sensor particularly suited for medical diagnostic applications.

A still further object of the present invention is to provide a sensordevice or sensor array easily adapted to be responsive to a variety ofexternal stimuli.

Another object of the present invention is to provide an improvedpressure sensor array wherein the sensitivity of individual pressuresensing regions of the pressure sensor array is adjustable.

A further object of the present invention is to provide improved methodsfor manufacturing pressure sensor elements or pressure sensor arrays.

A still further object is to provide a pressure sensor array or pressuresensor elements which can be produced with high yields and at arelatively low cost.

These and other objects and advantages are achieved in accordance withthe present invention by a pressure sensor element comprising a cathodelayer, a cathode operatively connected to a surface of the cathode layerand having a cathode tip at a distal end of the cathode, and an anodediaphragm. The anode diaphragm has a predetermined separation from thecathode tip and receives electrons emitted from the cathode tip.

In one aspect of the present invention, the anode diaphragm isdeflectable in response to an applied pressure and electron flow fromthe cathode tip to the anode varies in accordance with such deflection.An insulating layer insulates and separates the cathode layer from theanode diaphragm and has at least one hole into which the cathodeextends. A power supply is operatively connected to the cathode layerand the anode diaphragm for applying a predetermined voltage to producea predetermined flow of electrons. The magnitude of the flow ofelectrons depends of the separation between the cathode tip and theanode at the pressure of operation.

In another aspect of the present invention, a plurality of pressuresensor elements are formed on a common cathode layer, thereby forming apressure sensor array. Addressing means provide means for sensing eachof, or selected groups of, the pressure sensor elements within thepressure sensor array. Addressing two or more proximate pressure sensorelements increases the sensitivity of the pressure sensor array in theregion where those pressure sensor elements are located.

These and other objects and advantages are achieved in accordance withthe present invention by a method for manufacturing pressure sensorelements and arrays comprising the steps of forming a rigid structure bydepositing a first insulating layer on a conductive material, depositinga first layer on the first insulating layer, etching a first hole in thefirst layer and a second hole in the first insulating layer, therebyexposing the conductive material. A cathode is deposited in the secondhole on the conductive material, the cathode having a cathode tip at adistal end. A support structure is formed by depositing a conductinglayer on a substrate. The rigid structure and support structure arebonded together so that the conducting layer opposes the cathode tip,and the substrate is etched to expose the conducting layer.

BRIEF DESCRIPTION OF THE DRAWINGS

These and other features and advantages of the present invention aredisclosed in or apparent from the following detailed description ofpreferred embodiments. The preferred embodiments are described withreference to the drawings, in, which like elements are denotedthroughout the figures with like reference numbers, and in which:

FIG. 1A and 1B are diagrammatic views of a preferred embodiment of asingle pressure sensor element according to the present invention;

FIG. 2A and 2B are diagrammatic views of another preferred embodiment ofa single pressure sensor element according to the present invention;

FIG. 3 is a diagrammatic view of a preferred embodiment of a pressuresensor array using a plurality of pressure sensor elements as shown inFIG. 1A;

FIG. 4 is a diagrammatic view of another preferred embodiment of apressure, sensor, array using a plurality of pressure sensor elements asshown in FIG. 2A;

FIGS. 5A, 5B and 5C are schematic views of patterns formed on thecathode and anode layers for accomplishing addressing of the pressuresensor elements shown in FIGS. 1A, 2A, 3 and 4;

FIGS. 6A and 6B are schematic views of structures for accomplishingpressure sensor array addressing in accordance with FIGS. 5A and 5B andFIGS. 5A and 5C, respectively;

FIG. 7 is a schematic view showing charge-coupled device addressing of/apreferred embodiment of the pressure sensor array;

FIGS. 8A-8G schematically illustrate the steps of forming a pressuresensor array in accordance with a preferred embodiment of the presentinvention; and

FIGS. 9A-9B schematically illustrate the steps of forming a pressuresensor array in accordance with another preferred embodiment of thepresent invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Referring to FIG. 1, a pressure sensor element 1 according to thepresent invention comprises a substrate 10 formed from a rigid material.The purpose of the substrate 10 is merely to support the operativestructure of the pressure sensor element 1 and substrate 10 is omittedif not required for structural reasons. A cathode layer 12 is depositedon the substrate 10 by means described below. In order to form a supportstructure for an anode layer 14 and to insulate the anode layer 14 fromthe cathode layer 12, an insulating layer 16 is deposited over thecathode layer 12. Preferably, insulating layer 16 has a uniformthickness and is provided with at least one hole 18, thereby forming avoid 19 bounded by the opposing surfaces of the cathode layer 12 and theanode layer 14 and by the circumference of hole 18 in the insulatinglayer 16. A vent 21 advantageously provides fluid communication from thehole 18 to the exterior of pressure sensor element 1, allowing pressuresensor element 1 to operate at atmospheric pressure. Preferably, apassivating layer 23 is deposited on the surface of the anode layer 14opposite to void 19.

A single, needle-like cathode 20 is provided in the void 19 with one endof cathode 20 affixed to cathode layer 12. Cathode 20 extends into thevoid 19 for a predetermined distance which is less than the thickness ofthe insulating layer 16 and thereby produces a predetermined separation22 between a cathode tip 24, located on the distal end of the cathode20, and the side of the anode layer 14 opposing cathode layer 12.

For producing a desired electron emission, a voltage source 26 isoperatively connected to both the cathode layer 12 and the anode layer14. Preferably, the positive and negative terminals of the voltagesource 26 are connected to the anode layer 14 and the cathode layer 12,respectively. Voltage source 26 produces a predetermined flow ofelectrons, i.e., current, whose magnitude is dependant on the separation22. An ammeter 28 advantageously is connected in series with the voltagesource 26 to measure the output of the pressure sensor element 1.Changes in measured current correspond to changes in separation 22.

In another preferred embodiment, a pressure sensor element, denoted 1',according to the present invention, comprises substrate 10, cathodelayer 12, anode layer 14 and passivating layer 23, as described for thepressure sensor element 1 above. Located between the cathode layer 12and the anode layer 14 is a support and insulating structure comprisedof a first insulating layer 16', deposited over the cathode layer 12,and containing at least one hole (designated 18'). A second insulatinglayer 30, having at least one hole 32, is formed between the firstinsulating layer 16' and anode layer 14. Preferably, a gate layer 34 islocated between the first and second insulating layers 16' and 30, andcontains at least one hole 36. The centerlines of the three holes, 18',32 and 36, are located approximately on the same axis and, thus, form avoid 38 within the pressure sensor element 1'.

A single, needle-like cathode 20 is provided in void 38, having one endof cathode 20 affixed to cathode layer 12. Cathode 20 extends into thevoid 38 for a predetermined distance which is less than the thickness ofthe first insulating layer 16', the gate layer 34 and the secondinsulating layer 30, producing a predetermined separation 22' betweencathode tip 24, located on the distal end of the cathode 20, and theside of the anode layer 14 opposing cathode layer 12.

In the preferred embodiment, a voltage source (denoted as 26') isoperatively connected to cathode layer 12, gate layer 34 and anode layer14 to produce a predetermined flow of electrons with a magnitudecorresponding to a predetermined separation 22'. Ammeter 28 againmeasures the output of the pressure sensor element 1'. By way ofexample, FIG. 2 shows the voltage source 26' connected between thecathode layer 12 and the anode layer 14. A center tap potentiometer 40is operatively connected in parallel with the output terminals of thevoltage source 26' with the center tap 42 connected to the gate layer34.

The method of operation of the pressure sensor element 1, 1' depends onthe predetermined separation 22, 22', respectively. When the separation22, 22' is less than or equal to about 10 angstroms (Å) electronemission occurs by tunneling. When the separation 22, 22' it greaterthan about 10 Å, electron emission occurs due to field emission.

Tunneling of electrons from a surface occurs when fields on the order of10⁷ Volts per centimeter are applied to the surface. For example, ascanning tunneling microscope (STM), such as those described in U.S.Pat. Nos. 4,343,993 and 4,668,865, can be formed when a sharp point isbrought close to a surface. The field is accentuated on the sharp point.Tunneling occurs at a potential of a few volts between the point and thesurface for a separation of approximately 10 Å. In STM technology, avoltage is applied to produce tunneling of electrons, and the tip isscanned across the surface while maintaining a constant tunnelingcurrent. Because the surface being examined has topography, the sharppoint must be moved towards or away from the surface to maintain aconstant spacing and, therefore, a constant tunnel current. A map of thesurface is then obtained by plotting the separation. Since the currentproduced by the tunneling of electrons is exponentially dependant on theseparation between the tip and the surface, surface definition ismeasured with a high degree of accuracy. With STM techniques, it ispossible to resolve surface features of about 0.02 Å.

If the cathode-to-anode separation is greater than about 10 Å, themechanism of electron emission is called field emission. The currentdensity, J, is described by the Fowler-Nordheim equation: ##EQU1## whereφ is the work function, V is voltage, β is a geometric factor and A andB are constants. In field emission, the electrons leave the metalcathode and travel the air or vacuum gap before penetrating the anode.

For the pressure sensor element 1, 1' described above, the electronemission mechanism, tunneling or field emission, is determined by thepredetermined separation 22, 22', which is controlled by the fabricationtechniques selected in building the pressure sensor element 1,1'. Ineither case, the method for pressure detection depends on the fieldstrength between the cathode tip 24 and the anode layer 14. The anodelayer 14 for the pressure sensor element 1, 1' is fabricated as aflexible diaphragm (denoted as anode diaphragm 14' and shown in FIGS. 1Band 2B) which deflects in response to the pressure applied to the anodelayer 14. The deflection of anode diaphragm 14' changes the actualseparation between anode layer 14 and cathode tip 24, which changes thefield strength and, thus, causes a corresponding change in the quantityof electron current produced by the predetermined applied voltage. Inactual operation, the substrate 10, the cathode layer 12 and the supportstructure, insulating layer 16 or first and second insulating layers16', 30 and gate layer 34, form a rigid structure. Pressure applied tothe pressure sensor element 1, 1' at the anode layer 14 causes the anodediaphragm 14' to deflect into the void 19 (void 38), changing themagnitude of separation 22, 22', and, thus, changing the field strengthbetween the cathode tip 24 and the anode layer 14. (Hereinafter, theanode layer 14 having anode diaphragms 14' will be referred to using theterminology anode (diaphragm) layer 14 unless more specific terms areneeded to distinguish the anode diaphragm 14' region from the anodelayer 14). This in turn produces a measurable change in electron currentwhich is detected by the ammeter 28.

The deflection of the anode (diaphragm) layer 14 is a stress reaction,and, thus, the sensitivity of the pressure sensor element 1, 1' isdetermined by the physical properties of the material used infabricating anode (diaphragm) layer 14, and the surface area of the void19 (void 38). Since the only variable in the field strength isseparation 22, 22', and since the emitted current is exponentiallydependant of field strength, a high degree of sensitivity is achieved bypressure sensor element 1, 1'.

While the preferred embodiments of the pressure sensor element 1, 1' aredescribed in terms of measuring an applied pressure by measuring thechange in electron current using ammeter 28, other mechanisms are notprecluded by this description. For example, in another preferredembodiment, the voltage source 26 advantageously is a voltage devicewhere the output voltage is servoed such that the electron current ismaintained at a predetermined constant value. Deflection of the anode(diaphragm) layer 14 causes a resultant change in the voltage applied byvoltage source 26, 26' and the pressure change is determined bymeasuring the change in supply voltage.

It should be further understood that the teachings of the presentapplication are not limited to sensing pressure. The present inventionis equally applicable for use in detecting any external stimulus capableof directly or indirectly causing a change in the actual separationbetween the cathode tip 24 and the anode (diaphragm) layer 14. Forexample, in yet another preferred embodiment, the anode (diaphragm)layer 14 comprises first and second materials having thermal expansioncoefficients different from each other, forming a bimetallic sandwichmaterial. The anode (diaphragm) layer 14 advantageously is renderedtemperature sensitive, since changes in temperature cause the materialsto expand differing amounts and, thus, cause the anode (diaphragm) layer14 to bend, changing the actual separation between the cathode tip 24and the anode (diaphragm) layer 14. In still other preferredembodiments, secondary structures such as beams and weights arefabricated on anode (diaphragm) layer 14 so that vibrations or velocitychanges cause resultant changes in the anode (diaphragm) layer 14position relative to the cathode tip 24. Thus, microphones andaccelerometers advantageously are produced from the basic structure ofthe present invention. In still further preferred embodiments, secondarystructures are fabricated to place hygroscopic elements, which expand orcontract according to changes in moisture, in contact with the anode(diaphragm) layer 14 to thereby render the present invention responsiveto changes in humidity.

In another preferred embodiment of the present invention, a plurality ofpressure sensor elements 1, 1', described above, advantageously form twodimensional pressure sensor arrays, which measure pressuredistributions.

Referring to FIG. 3, a pressure sensor array 2 according to the presentinvention comprises a plurality of the pressure sensor elements 1located in an array. Since only the actual number of pressure sensorelements 1 changes between FIGS. 1 and 3, additional discussion of thedetails and arrangement of the various layers and elements will beomitted. It should be noted, however, that insulating layer 16 isprovided with a plurality of holes 18, forming a cellular grid or meshpattern. While not limited to any particular pattern, the structure willbe further described in terms of parallel rows and columns perpendicularto each other, for ease of visualization. Preferably, the holes 18 inthe cellular grid are arranged in a hexagonal close-pack arrangement,which provides a maximum density of pressure sensor elements 1 inpressure sensor array 2.

Referring to FIG. 4, another preferred embodiment of the presentinvention is shown in FIG. 4, wherein a pressure sensor array, denoted2', comprises a plurality of the triode pressure sensor elements 1'. Thecenterlines of the three holes, 18', 32 and 36, are locatedapproximately on the same axis and, thus, form a cellular array of voids38 within the pressure sensor array 2'.

Preferably, pressure sensor array 2, 2', described above, contains aplurality of pressure sensor elements 1, 1', respectively, connected inparallel. Pressure sensor array 2, 2' advantageously is configurable formapping pressure after certain modifications are made to the structuresdescribed above to address the individual pressure sensor elements 1,1', or predetermined groups of the pressure sensor elements 1, 1'. Whileeach individual pressure sensor element 1, 1' can be fabricated suchthat each is electrically isolated from the rest and each isindividually wired to the voltage source 26, 26' and an ammeter 28, moreefficient methods of addressing are available. For example, arrayaddressing and charged coupled device addressing advantageously are usedto discriminate between the individual pressure sensor elements 1, 1' ofthe pressure sensor array 2, 2'.

For array addressing, both the cathode layer 12 and the anode(diaphragm) layer 14 are formed having predetermined patterns ofconducting and insulating materials. FIG. 5A shows cathode layer 12comprising parallel strips of conducting material 50 and insulatingmaterial 52. FIG. 5B shows anode (diaphragm) layer 14 comprisingparallel strips of conducting material 54 and insulating material 56. Apressure sensor array 2, 2' thus formed produces the structure shown inFIG. 6A. Each pressure sensor element 1, 1' of the pressure sensor array2, 2' advantageously is addressed by merely specifying the row andcolumn to be read.

The actual number of pressure sensor elements 1, 1' addressed in thismanner is controlled by varying the width of the conducting stripscomprising cathode layer 12 and anode (diaphragm) layer 14. For example,if each conducting strip is wider than the centerline-to-centerlineseparation between two adjacent pressure sensor elements 1, 1', theintersection of the rows and columns encompasses four individualpressure sensor elements 1, 1' and the value read by array addressing isthe output of the four devices in parallel. Operating a plurality ofpressure sensor elements 1, 1' in parallel advantageously increases thesensitivity of pressure sensor array 2, 2' by increasing the measurablecurrent produced by the flow of electrons. According to another aspectof the present invention, sensitivity is increased by forming aplurality of cathodes in each of the voids 19, 38 thereby increasing themeasurable current.

In another preferred embodiment of the present invention, conductingstrips having different geometries produce different physical structuresto accomplish array addressing. Referring to FIG. 5C, an exemplary anode(diaphragm) layer 14 is shown formed from a plurality of anodediaphragms 14' located in anode layer 14. Anode layer 14 is formed as amesh or grid pattern of insulating material 56 and individual anodediaphragms 14' are formed in the apertures of the pattern fromconducting material 54. A connector strip 58, shown in FIG. 6B, isformed on the surface of anode layer 14 substantially over theinsulating material 56. A portion of the connecting strip 58 isconnected to at least one of the anode diaphragms 14'. Preferably, arrayaddressing is accomplished using the conducting strips 50, shown in FIG.5A, of the cathode layer 12 and the connecting strips 58.

In another preferred embodiment of the present invention, conventionalcharge-coupled device (CCD) addressing advantageously is used to samplethe pressure sensed at each pressure sensor element 1, 1' of thepressure sensor array 2, 2'. Preferably, addressing each pressure sensorelement 1, 1' is performed using, for example, buried-channel CCDaddressing in a pattern such as that shown in FIG. 7. Since CCDaddressing is a conventional technique used for such devices as videocameras and facsimile machines, and since the fabrication ofburied-channel CCDs does not constitute a part of the present invention,further details on CCDs are not given here.

The methods of fabricating pressure sensor elements and sensor elementarrays will now be discussed while referring to FIGS. 8 and 9, whichshow the resulting structures of the pressure sensor arrays 2,2' aftervarious fabrication steps.

The method for fabricating a two active layer device, previouslydescribed as the pressure sensor element 1 and the pressure sensor array2 will now be described. A rigid structure is formed by depositing a toa thickness of about 1 micrometer (μm) by conventional techniquesincluding thermal oxidation, chemical vapor deposition (CVD) or otherdeposition technique. The resulting structure is illustrated in FIG. 8A.

A layer 34 is then deposited to a thickness of about 3000 Å on the firstinsulating layer 16 as shown in FIG. 8B. Preferably, layer 34 isconductive. A layer of resist material is then applied to a uniformthickness over layer 34 using any conventional technique. A pattern ofapertures having diameters approximately equal to the thickness of thefirst insulating layer 16 and centerlines corresponding the centerlinesof the desired cathode locations are then developed in the resist layer.The resist material corresponding to the intended holes 18 is thenremoved by conventional techniques.

First holes are produced by etching layer 34 through the apertures inthe resist layer using conventional etching techniques and then secondholes are formed in the insulating layer 16, exposing the conductivematerial 12, by directional plasma etching. The remaining resist layeris then removed and layer 34 is undercut using a conventional process,e.g., isotropic wet etching. The resulting structure is shown by FIG.8C.

Cathodes 20 are deposited in the second holes shown in FIG. 8C usingmethods disclosed by Spindt et al., U.S. Pat. Nos. 3,789,471 and3,812,559, incorporated herein for all purposes by reference. The heightof the cathodes 20 thus formed are controlled so that cathode tips 24 atthe distal end of the cathodes 20 are within a plane parallel toconducting material 12. Preferably, this plane is offset from theinsulating layer 16, conducting layer 34 boundary by separation 22. Theresulting structure is shown by FIG. 8D.

The second holes in the insulating layer 16 are further undercut to thedesired diameter of the anode diaphragm 14' by a second conventionalisotropic wet etch step. The remainder of layer 34 is then removed byselectively etching layer 34, leaving insulating layer 16 and cathodes20 exposed. The resulting structure is shown by FIG. 8E. A vent hole isthen formed by conventional techniques including: applying a resistlayer to insulating layer 16; developing a line in the resist layer;washing; etching a line in insulating layer 16; and then selectivelyetching the remaining resist layer.

A support structure containing the anode (diaphragm) layer 14 is formedby depositing a conducting layer on an independent flat substrate. Theresulting structure is shown in FIG. 8F.

The individual pieces, the rigid structure and the support structureshown in FIGS. 8E and 8F, are then assembled by bonding the anode(diaphragm) layer 14 to the insulating layer 16 using conventionaltechniques, i.e., anodic or fusion bonding techniques. The resultingstructure is shown in FIG. 8G. The substrate material adjacent to anode(diaphragm) layer 14 is then selectively etched to leave the rigidstructure bonded to the anode (diaphragm) layer 14, producing thestructure shown in FIG. 3. Preferably, a passivating layer 23 isdeposited on the anode (diaphragm) layer 14 to protect the anode(diaphragm) layer 14 from physical damage, as passivating layer 23 isthe actual layer subjected to the external stimulus.

In another preferred embodiment of the method of the present invention,pressure sensor elements 1' and pressure sensor array 2' are formed by amethod similar to that described immediately above. Preferably,fabrication is the same up to the point where cathodes 20 are depositedin the second holes. The height of the cathodes formed is controlled sothat the cathode tips 24 are again located in a plane parallel to theconducting material 12. Preferably, the plane of the cathode tips 24 isproximate to the plane of layer 34. An exemplary structure is shown byFIG. 9A.

An insulating layer 30 is then deposited on layer 34 to a predeterminedthickness so that the distance from the cathode tips 24 to the surfaceof the anode (diaphragm) layer 14, located opposite layer 34 afterfabrication is complete, will be the predetermined separation 22'. Anexemplary structure is shown in FIG. 9B. The second insulating layer 30is then patterned using conventional techniques to produce third holeswhose centerlines correspond to the centerlines of the first and secondholes. Preferably, the diameter of the third holes formed in the secondinsulating layer 30 is the width of the anode diaphragms 14'. Theresulting structure is shown by FIG. 9C.

A vent is then formed by the steps of: applying a resist layer to thesecond insulating layer 30; developing a line in the resist layer;washing; etching a line in the second insulating layer 30; and thenselectively etching the remaining resist layer, thereby exposing thesecond insulating layer 30.

In one aspect of the present invention, a support structure containingthe anode (diaphragm) layer 14 is formed by depositing conducting layeron an independent flat substrate. The resulting structure is shown inFIG. 9D.

The individual pieces, the rigid structure and the support structure,shown in FIGS. 9C and 9D, respectively, are then assembled by bondingthe anode (diaphragm) layer 14 to the second insulating layer 30 usingconventional techniques, i.e., anodic or fusion bonding techniques. Theresulting structure is shown in FIG. 9E. Preferably, the substratematerial adjacent to anode (diaphragm) layer 14 is then selectivelyetched to leave the rigid structure bonded to the anode (diaphragm)layer 14, producing the structure shown in FIG. 4. A passivating layer23 advantageously is deposited by conventional techniques. Thepassivating layer 23 is the surface which is actually in contact withthe surface to be sensed.

In yet another preferred embodiment of pressure sensor element 1', whichadvantageously is used to form sensor array 2', a power source 26' isoperatively connected to cathode layer 14, anode layer 14 and gate layer34. A first predetermined voltage is applied between cathode layer 12and gate layer 34, producing a predetermined flow of electrons betweencathode tip 24 and gate layer 34 and a predetermined first potential atcathode tip 24. Preferably, a second predetermined voltage is applied soas to produce a second potential at anode layer 14 which is less than orequal to the cathode tip 24 potential. The field at cathode tip 24advantageously is a superposition of both the first and secondpotentials. Deflection of anode layer 14, which produces a correspondingdecrease in separation 22', produces a corresponding decrease in theflow of electrons from cathode tip 24. Preferably, ammeter 28 measuresthe current resulting from the flow of electrons. Thus, current fromcathode tip 24 initially is a maximum value and decreases withincreasing deflection of anode layer 14.

Those skilled in the art will recognize that various fabricationalternatives may be used without departing from the disclosure of theinvention. In another preferred embodiment, for example, the substratematerial on which the anode (diaphragm) layer 14 is deposited is firstpatterned and etched by conventional techniques to form linear strips orchannels, described above. Conventional deposition techniques are thenused to deposit the selected anode diaphragm 14 material into the stripsthus formed. Bonding of the substrate/anode layer is then performed asdescribed above.

Those skilled in the art will also recognize that, although thediscussion above was made in terms of fabricating either a pressuresensor element or a pressure sensor array, in actuality, individualpressure sensor elements 1, 1' advantageously are obtained from pressuresensor arrays 2,2'. By controlling the geometry of the pressure sensorarray 2, 2', individual pressure sensor elements 1. 1' can be fabricatedat substantial cost savings and in production quantities.

In addition, those skilled in the art will recognize the flexibility ofthe above described sensors for performing applications not specificallyaddressed. For example, the pressure sensor array 2, 2' is easilyadapted to other applications such as artificial skin for roboticassemblies, and scanners for reading surface contours of small parts,finger prints and the like. In other preferred embodiments, the sensorarray is made to sense a variety of external stimuli simultaneously byfabricating various functions into different regions of anode(diaphragm) layer 14. Thus, an exemplary combined sensor advantageouslyis produced for sensing two or more stimuli, i.e., pressure andtemperature, at different, but closely spaced, regions on the array.

Other modifications and variations to the invention will be apparent tothose skilled in the art from the foregoing disclosure and teachings.Thus, while only certain embodiments of the invention have beenspecifically described herein, is will be apparent that numerousmodifications may be made thereto without departing from the spirit andscope of the invention.

What is claimed is:
 1. A pressure sensor array apparatus comprising:acathode layer; a plurality of cathodes disposed in an array andoperatively connected to said cathode layer and having a cathode tip ata distal end of each of said cathodes; an anode layer locatedsubstantially parallel to said cathode layer having a plurality of anodediaphragms and having a predetermined separation from said cathode tipsfor receiving electrons emitted from said cathode tips, said anodediaphragms being deflectable in response to a pressure applied to saidanode diaphragms; a first insulating layer located between said cathodelayer and said anode layer and separating said cathodes from said anodediaphragms, said insulating layer having a plurality of holes into whichsaid cathodes extend; and means for applying a predetermined voltageproducing a flow of electrons having a magnitude dependant on saidseparation.
 2. The apparatus of claim 1, further comprising means forlocating at least one of said anode diaphragms in said pressure sensorarray deflecting responsive to said pressure applied to said one of saidanode diaphragms.
 3. The apparatus of claim 1, wherein said cathodelayer further comprises a pattern of linear strips of a conducting firstmaterial operatively connected to said cathodes and separated by linearstrips of an insulating second material and wherein said anode layerfurther comprises a pattern of linear strips of conducting thirdmaterial separated by linear strips of an insulating fourth material,said linear strips of said first and third materials intersecting theaxis of at least one of said cathodes.
 4. The apparatus of claim 3,wherein said linear strips of said first material are wider than thecenter-line-to-centerline distance between any two adjacent saidcathodes.
 5. The apparatus of claim 3, wherein said linear strips ofsaid third material are wider than the center-line-to-centerlinedistance between any two adjacent said cathodes tips.
 6. The apparatusof claim 1, wherein said cathode layer further comprises a pattern oflinear strips of a conducting first material operatively connected tosaid cathodes and separated by linear strips of an insulating secondmaterial and wherein said anode layer further comprises a pattern of aconducting third material and an insulating fourth material forming aplurality of anode diaphragms disposed within said fourth material, saidanode layer further comprising a plurality of connecting stripssubstantially parallel to each other, each of said connecting stripshaving a connection to at least one of said plurality of anodediaphragms.
 7. The apparatus of claim 6, wherein said linear strips ofsaid first material is wider than the center-line-to-centerline distancebetween any two proximate said cathodes.
 8. The apparatus of claim 1,further comprising vent means for fluidly connecting said plurality ofholes and atmosphere.
 9. The apparatus of claim 1, wherein said thirdmaterial is a metal.
 10. The apparatus of claim 1, further comprising:agate layer located between said first insulating layer and said anodelayer and having a plurality of second holes located substantiallycoaxial with the axes of said cathodes; a second insulating layerseparating said gate layer from said anode layer, said second insulatinglayer having a plurality of third holes located substantially coaxial tothe axes of said cathodes; and means for applying a second predeterminedvoltage between said cathodes and said gate layer for use in controllingfield strength proximate to said cathode tips.
 11. A sensor comprising:abase; a plurality of cathodes disposed on the base, each cathode havinga cathode tip at a distal end thereof; an anode layer, located in spacedrelation to the base, for receiving electrons emitted form said cathodetips, said anode layer being deflectable in response to a stimulus to besensed when said stimulus is applied to said anode layer; a membercomprising an insulating layer between said base and said anode layerfor maintaining said anode layer at a predetermined separation from saidcathode tips when the anode layer is undeflected; and means forconducting a predetermined voltage to each of the cathodes for producinga flow of electrons to the anode layer having a magnitude dependent onsaid separation.
 12. A sensor as in claim 11, wherein said insulatinglayer has a plurality of holes into each of which one of said cathodesextends.
 13. A sensor as in claim 11, wherein said membercomprises:first and second insulating layers located between said anodelayer and said base for insulating and separating said anode layer formsaid base, said first and second insulating layers having a plurality offirst and second holes, respectively, each of the plurality of holesbeing located substantially coaxial with the axis of one of the cathodetips; and a gate layer located between said first and second insulatinglayers and having a plurality of third holes, each hole beingsubstantially coaxial with the axis of said one of the plurality ofcathode tips, said gate layer receiving a predetermined second voltagefor use in controlling field strength at said cathode tips.